Thermal Rectification and Thermal Logic Gates in Graded Alloy Semiconductors
| Primer Autor |
Ng, Ryan C.
|
| Co-autores |
Castro-Alvarez, Alejandro
Sotomayor-Torres, Clivia M.
Chavez-Angel, Emigdio
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| Título |
Thermal Rectification and Thermal Logic Gates in Graded Alloy Semiconductors
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| Editorial |
MDPI
|
| Revista |
ENERGIES
|
| Lenguaje |
en
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| Resumen |
Classical thermal rectification arises from the contact between two dissimilar bulk materials, each with a thermal conductivity (k) with a different temperature dependence. Here, we study thermal rectification in a Si(1-x)Gex alloy with a spatial dependence on the atomic composition. Rectification factors (R = k(max)/k(min)) of up to 3.41 were found. We also demonstrate the suitability of such an alloy for logic gates using a thermal AND gate as an example by controlling the thermal conductivity profile via the alloy composition. This system is readily extendable to other alloys, since it only depends on the effective thermal conductivity. These thermal devices are inherently advantageous alternatives to their electric counterparts, as they may be able to take advantage of otherwise undesired waste heat in the surroundings. Furthermore, the demonstration of logic operations is a step towards thermal computation.
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| Tipo de Recurso |
artículo original
|
| Description |
We acknowledge the support from Spanish MICINN project SIP (PCG2018-101743-B-100). R.C.N. acknowledges funding from the EU-H2020 Research and Innovation Programme under the Marie Sklodowska Curie Individual Fellowship (Grant No. 897148). A.C.-A. acknowledges the support from the Fondecyt Iniciacion 11200620.
Agradecemos el apoyo del proyecto español MICINN SIP (PCG2018-101743-B-100). R.C.N. reconoce la financiación del Programa de Investigación e Innovación EU-H2020 en el marco de la Beca Individual Marie Sklodowska Curie (Subvención No. 897148). A.C.-A. agradece el apoyo del Fondecyt Iniciación 11200620.
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| doi |
10.3390/en15134685
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| Formato Recurso |
PDF
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| Palabras Claves |
thermal rectifier
alloy
rectification
logic gate
RESISTIVITY
INTERFACE
TRANSPORT
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| Ubicación del archivo | |
| Categoría OCDE |
Energía y combustibles
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| Materias |
rectificador térmico
aleación
rectificación
puerta lógica
RESISTIVIDAD
INTERFAZ
TRANSPORTE
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| Título de la cita (Recomendado-único) |
Thermal Rectification and Thermal Logic Gates in Graded Alloy Semiconductors
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| Identificador del recurso (Mandatado-único) |
artículo original
|
| Versión del recurso (Recomendado-único) |
version publicada
|
| License |
CC BY 4.0
|
| Condición de la licencia (Recomendado-repetible) |
CC BY 4.0
|
| Derechos de acceso |
acceso abierto
|
| Access Rights |
acceso abierto
|
| Referencia del Financiador (Mandatado si es aplicable-repetible) |
ANID-FONDECYT 11200620
MICINN PCG2018-101743-B-100
UE EU-H2020 897148
ANID FONDECYT 11200620
|
| Id de Web of Science |
WOS:000823979000001
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