Electronic structure and STM images simulation of defects on hBN/black-phosphorene heterostructures: A theoretical study

Primer Autor
Correa, J. D.
Co-autores
Ospina, D. A.#Cisternas, E.#Duque, C. A.
Título
Electronic structure and STM images simulation of defects on hBN/black-phosphorene heterostructures: A theoretical study
Editorial
ELSEVIER SCIENCE BV
Revista
SURFACE SCIENCE
Lenguaje
en
Resumen
By first principles calculations which include van der Waals interactions, we studied the electronic structure of hexagonal boron-nitride/black-phosphorene heterostructures (hBN/BP). In particular the role of several kind of defects on the electronic properties of black-phosphorene monolayer and hBN/BP heterostructure was analyzed. The defects under consideration were single and double vacancies, as well Stone-Wale type defects, all of them present in the phosphorene layer. In this way, we found that the electronic structure of the hBN/BP is modified according the type of defect that is introduced. As a remarkable feature, our results show occupied states at the Fermi Level introduced by a single vacancy in the energy gap of the hBN/BP heterostructure. Additionally, we performed simulations of scanning tunneling microscopy images. These simulations show that is possible to discriminate the kind of defect even when the black-phosphorene monolayer is part of the heterostructure hBN/BP. Our results may help to discriminate among several kind of defects during experimental characterization of these novel materials. (C) 2017 Elsevier B.V. All rights reserved.
Tipo de Recurso
Artículo original
Description
This work was partially supported by the Universidad de La Frontera, under Project DI17-0027, and by the Universidad de Medellin. Some of the DFT calculations were performed on the Laboratorio de Simulacion y Computacion Cientifica at Universidad de Medellin. Powered@NLHPC: This research was partially supported by the supercomputing infrastructure of the NLHPC(ECM-02).
Este trabajo fue financiado parcialmente por la Universidad de La Frontera, en el marco del Proyecto DI17-0027, y por la Universidad de Medellín. Algunos cálculos DFT se realizaron en el Laboratorio de Simulación y Computación Científica de la Universidad de Medellín. Impulsado por NLHPC: Esta investigación fue parcialmente financiada por la infraestructura de supercomputación del NLHPC (ECM-02).
doi
10.1016/j.susc.2017.11.015
Formato Recurso
pdf
Palabras Claves
Black-phosphorene# Boron nitride# Heterostructures# STM
Ubicación del archivo
http://dx.doi.org/10.1016/j.susc.2017.11.015
Categoría OCDE
Chemistry, Physical# Physics, Condensed Matter
Materias
Fosforeno negro# nitruro de boro# Heteroestructuras# STM
Disciplinas de la OCDE
Física de la Materia Condensada
Nanomateriales (Producción y Propiedades)
Física Atómica, Molecular y Química
Id de Web of Science
WOS:000424852800013
Título de la cita (Recomendado-único)
Electronic structure and STM images simulation of defects on hBN/black-phosphorene heterostructures: A theoretical study
Identificador del recurso (Mandatado-único)
Artículo original
Versión del recurso (Recomendado-único)
version publicada
Editorial
ELSEVIER SCIENCE BV
Revista/Libro
SURFACE SCIENCE
Categoría WOS
Química Física# Física, Materia Condensada
ISSN
0039-6028
Idioma
en
Referencia del Financiador (Mandatado si es aplicable-repetible)
UFRO DI17-0027#Universidad de Medellin#NLHPC ECM-02
UFRO DI17-0027
Universidad de Medellin
NLHPC ECM-02
Descripción
This work was partially supported by the Universidad de La Frontera, under Project DI17-0027, and by the Universidad de Medellin. Some of the DFT calculations were performed on the Laboratorio de Simulacion y Computacion Cientifica at Universidad de Medellin. Powered@NLHPC: This research was partially supported by the supercomputing infrastructure of the NLHPC(ECM-02).
Formato
pdf
Tipo de ruta
suscripción
Access Rights
metadata
Derechos de acceso
metadata
Página de inicio (Recomendado-único)
6136
Página final (Recomendado-único)
6143
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