Electronic structure and STM images simulation of defects on hBN/black-phosphorene heterostructures: A theoretical study
| Primer Autor |
Correa, J. D.
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| Co-autores |
Ospina, D. A.#Cisternas, E.#Duque, C. A.
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| Título |
Electronic structure and STM images simulation of defects on hBN/black-phosphorene heterostructures: A theoretical study
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| Editorial |
ELSEVIER SCIENCE BV
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| Revista |
SURFACE SCIENCE
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| Lenguaje |
en
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| Resumen |
By first principles calculations which include van der Waals interactions, we studied the electronic structure of hexagonal boron-nitride/black-phosphorene heterostructures (hBN/BP). In particular the role of several kind of defects on the electronic properties of black-phosphorene monolayer and hBN/BP heterostructure was analyzed. The defects under consideration were single and double vacancies, as well Stone-Wale type defects, all of them present in the phosphorene layer. In this way, we found that the electronic structure of the hBN/BP is modified according the type of defect that is introduced. As a remarkable feature, our results show occupied states at the Fermi Level introduced by a single vacancy in the energy gap of the hBN/BP heterostructure. Additionally, we performed simulations of scanning tunneling microscopy images. These simulations show that is possible to discriminate the kind of defect even when the black-phosphorene monolayer is part of the heterostructure hBN/BP. Our results may help to discriminate among several kind of defects during experimental characterization of these novel materials. (C) 2017 Elsevier B.V. All rights reserved.
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| Tipo de Recurso |
Artículo original
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| Description |
This work was partially supported by the Universidad de La Frontera, under Project DI17-0027, and by the Universidad de Medellin. Some of the DFT calculations were performed on the Laboratorio de Simulacion y Computacion Cientifica at Universidad de Medellin. Powered@NLHPC: This research was partially supported by the supercomputing infrastructure of the NLHPC(ECM-02).
Este trabajo fue financiado parcialmente por la Universidad de La Frontera, en el marco del Proyecto DI17-0027, y por la Universidad de Medellín. Algunos cálculos DFT se realizaron en el Laboratorio de Simulación y Computación Científica de la Universidad de Medellín. Impulsado por NLHPC: Esta investigación fue parcialmente financiada por la infraestructura de supercomputación del NLHPC (ECM-02).
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| doi |
10.1016/j.susc.2017.11.015
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| Formato Recurso |
pdf
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| Palabras Claves |
Black-phosphorene# Boron nitride# Heterostructures# STM
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| Ubicación del archivo |
http://dx.doi.org/10.1016/j.susc.2017.11.015
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| Categoría OCDE |
Chemistry, Physical# Physics, Condensed Matter
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| Materias |
Fosforeno negro# nitruro de boro# Heteroestructuras# STM
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| Disciplinas de la OCDE |
Física de la Materia Condensada
Nanomateriales (Producción y Propiedades)
Física Atómica, Molecular y Química
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| Id de Web of Science |
WOS:000424852800013
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| Título de la cita (Recomendado-único) |
Electronic structure and STM images simulation of defects on hBN/black-phosphorene heterostructures: A theoretical study
|
| Identificador del recurso (Mandatado-único) |
Artículo original
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| Versión del recurso (Recomendado-único) |
version publicada
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| Editorial |
ELSEVIER SCIENCE BV
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| Revista/Libro |
SURFACE SCIENCE
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| Categoría WOS |
Química Física# Física, Materia Condensada
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| ISSN |
0039-6028
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| Idioma |
en
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| Referencia del Financiador (Mandatado si es aplicable-repetible) |
UFRO DI17-0027#Universidad de Medellin#NLHPC ECM-02
UFRO DI17-0027
Universidad de Medellin
NLHPC ECM-02
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| Descripción |
This work was partially supported by the Universidad de La Frontera, under Project DI17-0027, and by the Universidad de Medellin. Some of the DFT calculations were performed on the Laboratorio de Simulacion y Computacion Cientifica at Universidad de Medellin. Powered@NLHPC: This research was partially supported by the supercomputing infrastructure of the NLHPC(ECM-02).
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| Formato |
pdf
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| Tipo de ruta |
suscripción
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| Access Rights |
metadata
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| Derechos de acceso |
metadata
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| Página de inicio (Recomendado-único) |
6136
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| Página final (Recomendado-único) |
6143
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